2n6605 2n6606 2n6607 2N6608 silicon controlled rectifier 0.35 amp, 30 thru 200 volts description: the central semiconductor 2n6605 series types are hermetically sealed silicon controlled rectifiers manufactured in a to-18 case, designed for control systems and sensing circuit applications. marking: full part number to-18 case maximum ratings: (t c =25c) symbol 2n6605 2n6606 2n6607 2N6608 units peak repetitive off-state voltage v drm , v rrm 30 60 100 200 v average on-state current i o 0.35 a peak one cycle surge current (t=8.3ms) i tsm 6.0 a peak gate voltage v gm 8.0 v operating junction temperature t j -40 to +125 c storage temperature t stg -40 to +150 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i drm rated v drm , r gk =1.0k 120 na i rrm rated v rrm 250 na i gt v d =6.0v, r l =100 200 a v gt v d =6.0v, r l =100 0.8 v v tm i t =2.0a 2.0 v i h r gk =1.0k 5.0 ma r0 (30-march 2011) www.centralsemi.com
2n6605 2n6606 2n6607 2N6608 silicon controlled rectifier 0.35 amp, 30 thru 200 volts to-18 case - mechanical outline lead code: 1) cathode 2) gate 3) anode marking: full part number www.centralsemi.com r0 (30-march 2011)
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